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The 2N5375 PBFREE is a PNP silicon bipolar junction transistor manufactured by Central Semiconductor Corp using an epitaxial planar process. It features a collector-emitter voltage (VCEO) of 30 V and a maximum collector current (Ic) of 500 mA. The device has a power dissipation rating of 360 mW and a transition frequency of 150 MHz. DC current gain (hFE) is specified at a minimum of 40 when tested at 150 mA collector current and 10 V collector-emitter voltage. The operating junction temperature range extends from -65°C to 150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with lead-free requirements and packaging preferences. Confirm that the requested variant matches the exact electrical specifications required for the target circuit design before finalizing procurement orders.
Select this component for designs requiring a standard PNP transistor with moderate current handling capabilities. Ensure the application voltage does not exceed the 30 V collector-emitter limit. Consider the thermal management requirements associated with the 360 mW power dissipation rating in the TO-92 package.
This part belongs to the Central Semiconductor 2N5374/2N5375 series of PNP silicon transistors. These devices are designed for general-purpose use and are manufactured via the epitaxial planar process. They serve as complementary or alternative components in various electronic circuits requiring reliable bipolar transistor performance.
Consult official datasheets for direct pin-compatible substitutes. Verify that any replacement maintains identical polarity, voltage ratings, and current capabilities to ensure circuit functionality without modification.