2N5400 APM TIN/LEAD

Overview

The Central Semiconductor Corp 2N5400 APM TIN/LEAD is a small signal PNP silicon bipolar junction transistor housed in a TO-92 package. It features a collector-emitter breakdown voltage of 120V and a maximum collector current of 600mA. The device has a minimum DC current gain (hFE) of 40 at 10mA and 5V, with a transition frequency of 400MHz. Power dissipation is rated at 625mW, operating within a temperature range of -55°C to 150°C.

Feature Summary

• PNP polarity configuration for general-purpose switching applications
• High voltage capability suitable for signal processing circuits
• Through-hole mounting via TO-92 cylindrical plastic package

Applications

• Small signal amplification stages
• General purpose switching circuits
• Resistor logic circuits

Procurement Notes

Verify the specific suffix 'APM' against official datasheets to confirm tin/lead terminal plating and RoHS compliance status. Ensure the TO-92 package dimensions match design requirements. Confirm availability as this component may be subject to discontinuation or supply chain variations.

Selection Notes

Select this component for low-power PNP switching tasks requiring 120V blocking capability. Compare hFE ranges and thermal resistance against circuit requirements. Verify that the through-hole form factor aligns with PCB layout constraints and assembly processes.

Part Context

This part belongs to the standard 2N5400 family of small signal PNP transistors. It serves as a direct functional equivalent to industry-standard variants from other manufacturers, providing reliable performance in discrete semiconductor applications where moderate voltage and current handling are required.

Replacement Considerations

Direct substitutes include 2N5400 variants from onsemi or Central Semiconductor. Verify pinout compatibility and electrical ratings before substitution.