2N5400 TRE TIN/LEAD

$0.15

Description：120V 600MA 625MW TH TRANSISTOR-S
Series：-

SKU:287542e0e156 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：120V 600MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 50mA, 5V
Power - Max：1.5 W
Frequency - Transition：400MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5400 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5400 TRE TIN/LEAD is a single PNP silicon bipolar junction transistor designed for through-hole mounting in TO-92 packages. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 600 mA. The device supports a power dissipation of 625 mW and operates within a temperature range of -65°C to +150°C.

Feature Summary

Utilizes silicon planar epitaxial construction for stable high-voltage performance
Designed for general-purpose amplification and switching applications
Compatible with standard through-hole assembly processes

Applications

High-voltage amplifier circuits
General-purpose switching logic
Audio signal processing stages

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status and terminal plating composition. Ensure the selected variant matches the required package style and thermal characteristics for the intended application environment.

Selection Notes

Select this component when a PNP transistor with 120 V breakdown voltage and 600 mA current capacity is required. Confirm that the TO-92 package dimensions fit the PCB layout constraints and that the thermal management strategy accommodates the 625 mW power dissipation limit under operating conditions.

Part Context

This part belongs to the 2N5400 series of small-signal PNP transistors manufactured by Central Semiconductor Corp. These devices are commonly used in electronic designs requiring reliable high-voltage handling capabilities in compact through-hole packages.