2N5400_S00Z

Overview

The onsemi 2N5400_S00Z is a PNP silicon epitaxial planar transistor designed for general-purpose amplification and switching applications requiring high voltage capabilities. It operates within a collector-emitter voltage range of 120 V and supports continuous collector currents up to 600 mA. The device features a DC current gain (hFE) ranging from 30 to 180 depending on the operating current, with a maximum total power dissipation of 625 mW at 25°C ambient temperature. Packaged in a TO-92 configuration, it maintains an operating junction temperature range from -55°C to +150°C.

Feature Summary

• Designed for high-voltage general-purpose amplification and switching tasks
• Utilizes PNP silicon epitaxial planar construction for reliable operation
• Capable of handling continuous collector currents up to 600 mA

Applications

• General purpose amplifier circuits
• High voltage switching applications
• Low current precision circuits

Procurement Notes

Verify that the specific ordering suffix matches the required packaging format, as standard variants may differ from tape and reel configurations. Confirm the component status indicates full production availability rather than obsolete or preliminary stages. Ensure the manufacturer identification aligns with onsemi specifications to guarantee compliance with the documented electrical characteristics and thermal limits provided in the official datasheet.

Selection Notes

Select this component when circuit designs require a PNP transistor capable of sustaining 120 V collector-emitter breakdown voltages. Consider the TO-92 package constraints regarding thermal resistance and power dissipation limits when designing heat management strategies. Evaluate the hFE ranges against the specific biasing requirements of the intended amplifier or switch topology to ensure adequate signal gain or saturation performance.

Part Context

This component belongs to the standard 2N5400 family of small-signal bipolar transistors. It serves as a direct functional equivalent to other industry-standard PNP devices sharing identical pinouts and electrical ratings. The part is widely utilized in legacy and modern electronic designs where robust high-voltage switching and linear amplification are necessary within compact through-hole form factors.

Replacement Considerations

Direct substitutes include the ST2N5400 and Central Semiconductor 2N5400APP, which share identical PNP silicon construction and TO-92 packaging. Verify that alternative sources meet the same 120 V collector-emitter voltage rating and 600 mA continuous current specifications before implementation.