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The onsemi 2N5400G is a PNP silicon amplifier transistor designed for general-purpose switching and amplification applications. It operates within a collector-emitter voltage range of up to 120 Vdc and supports a continuous collector current of 600 mAdc. The device features a transition frequency (fT) between 100 MHz and 400 MHz, ensuring adequate high-frequency performance for small-signal tasks. Thermal management capabilities include a junction-to-ambient thermal resistance of 200 °C/W in standard configurations. The component is housed in a TO-92 package and is rated for operation across a temperature range from -55°C to +150°C.
Verify the specific ordering suffix to confirm the package style and shipping quantity. The 'G' suffix indicates a lead-free package configuration. Confirm whether the required unit is supplied in bulk or tape and reel formats, as these options have distinct handling requirements. Ensure the procurement specification matches the exact electrical ratings required for the target application design.
Select this component when a PNP transistor with a 120 V collector-emitter rating and 600 mA continuous current capacity is required. The TO-92 through-hole package facilitates easy prototyping and manual assembly. Consider the thermal resistance characteristics if operating near maximum power dissipation limits. Validate that the transition frequency meets the bandwidth requirements of the intended signal processing or switching speed.
This device belongs to the 2N5400 series of PNP bipolar junction transistors manufactured by onsemi. It serves as a standard discrete semiconductor solution for analog and digital circuit designs requiring reliable switching and amplification. The component is widely utilized in consumer electronics and industrial control systems where robust performance at low power levels is essential.
Direct substitutes include the 2N5400 (standard leaded version) and the 2N5400RLRP (tape and reel variant). Verify pinout compatibility and electrical parameter tolerances before substitution.
The maximum collector-emitter voltage (VCEO) is rated at 120 Vdc.
Yes, the 'G' suffix denotes that the device is available in a Pb-Free package.
The current-gain-bandwidth product (fT) ranges from 100 MHz to 400 MHz under specified test conditions.