2N5401

$0.13

Description：TRANS PNP 150V 0.6A TO-92
Series：-

SKU:d2cf50e3880b Category: Single Bipolar Transistors Brand: Diotec Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 150V 0.6A TO-92
Series：-
Mfr：Diotec Semiconductor
Package：Cut Tape (CT),Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：400MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92
Grade：-
Qualification：-

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2N5401

Overview

The Diotec Semiconductor 2N5401 is a general-purpose PNP bipolar junction transistor (BJT) designed for commercial and industrial applications. It operates with a maximum collector-emitter voltage of 150 V and supports a continuous DC collector current of 600 mA, with peak currents reaching 1 A. The device features a high DC current gain ranging from 50 to 240 at specified test conditions. Power dissipation is rated at 625 mW, supported by a thermal resistance of 200 K/W. The component functions effectively within a junction temperature range of -55°C to +150°C and utilizes a TO-92 through-hole package.

Feature Summary

High reverse voltage capability suitable for demanding switching environments
High collector current handling for robust signal processing tasks
Compliant with RoHS directives and REACH regulations

Applications

Signal processing circuits
Electronic switching applications
Amplification stages

Procurement Notes

Verify the specific ordering suffix when purchasing. Suffixes such as 'Q' indicate AEC-Q101 compliance, while 'AQ' denotes AEC-Q101 qualification. Standard versions are supplied in ammo packs with a 2.54 mm pitch. Bulk packaging with a 1.27 mm pitch requires the 'BK' suffix. Confirm these details against official distributor catalogs to ensure correct part selection.

Selection Notes

Select this component for standard commercial or industrial grade requirements where moderate power and voltage ratings are sufficient. Ensure the design accommodates the 625 mW power dissipation limit, maintaining leads at ambient temperature within 2 mm of the case. Verify that the required current gain falls within the 50 to 240 range under your specific operating bias conditions.

Part Context

This component belongs to the universal PNP transistor series manufactured by Diotec Semiconductor. It serves as a complementary counterpart to NPN transistors like the 2N5551. The device is engineered for general-purpose utility rather than specialized high-frequency or high-power scenarios, fitting into standard discrete semiconductor categories.

Replacement Considerations

Direct substitutes include the 2N5401YBU and 2N5401YTA from onsemi. These parts share identical electrical characteristics and pin configurations, allowing for direct replacement in existing designs without circuit modification.