2N5401 APM TIN/LEAD

$0.20

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-

SKU:6acb9501f704 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：1.5 W
Frequency - Transition：300MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92
Grade：-
Qualification：-

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2N5401 APM TIN/LEAD

Overview

The Central Semiconductor Corp 2N5401 APM TIN/LEAD is a PNP bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 150 V and a collector-base voltage of 160 V. The device supports a continuous DC collector current of 600 mA with a power dissipation rating of 625 mW. Key electrical characteristics include an emitter-base voltage of 5 V, a collector-emitter saturation voltage of 500 mV, and a transition frequency of 300 MHz. The component operates within a temperature range of -65°C to +150°C.

Feature Summary

High-voltage capability suitable for demanding circuit environments
Hermetic or robust construction options available within the series
Through-hole mounting configuration for standard PCB integration

Applications

General-purpose switching circuits
Low-current precision applications
Harsh environment electronic systems

Procurement Notes

Verify the specific suffix designation against the manufacturer's latest documentation to confirm lead-free compliance and terminal plating specifications. Ensure the procurement order matches the required packaging format, as this variant may be supplied in bulk reels or ammo packs depending on quantity. Confirm that the tin/lead termination style aligns with the assembly process requirements before finalizing the purchase order.

Selection Notes

Select this component when a high-voltage PNP transistor with moderate current handling is required for through-hole assemblies. Consider the 300 MHz transition frequency for applications requiring faster switching speeds compared to standard low-frequency variants. Evaluate the thermal management needs relative to the 625 mW power dissipation limit in the intended operating environment.

Part Context

This part belongs to the 2N5401 family of PNP silicon transistors manufactured by Central Semiconductor. The series is recognized for its reliability in space and harsh environment applications, with some variants qualified to ESCC specifications. The 2N5401 APM TIN/LEAD specifically denotes the terminal finish and packaging configuration within this established product line.