2N5401 APP TIN/LEAD

$0.20

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-

SKU:0d94ac610b58 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92
Grade：-
Qualification：-

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2N5401 APP TIN/LEAD

Overview

The Central Semiconductor Corp 2N5401 APP TIN/LEAD is a PNP silicon bipolar junction transistor housed in a TO-92-3 through-hole package. It supports a maximum collector current of 600 mA and withstands a collector-emitter voltage of 150 V, with a collector-base voltage rating of 160 V and an emitter-base voltage limit of 5 V. The device features a power dissipation capacity of 1.5 W and a transition frequency of 300 MHz. It operates within a temperature range from -65 °C to +150 °C.

Feature Summary

High radiation tolerance suitable for harsh environments
Lead-free compliant construction
Through-hole mounting configuration

Applications

Harsh environment electronics
Radiation-tolerant circuits
General-purpose switching applications

Procurement Notes

Verify the specific tin/lead plating requirement against project specifications, as this variant differs from standard lead-free versions. Confirm that the 1.5 W power dissipation rating aligns with thermal management designs. Ensure the manufacturer's production cycle meets assembly schedules. Validate RoHS status details directly with the supplier documentation before finalizing procurement orders.

Selection Notes

Select this component when high radiation hardness is required alongside standard signal switching capabilities. The 1.5 W power rating exceeds typical equivalents, allowing for higher thermal loads. Verify compatibility with existing TO-92 footprints. Consider the extended temperature range for reliability in demanding operational conditions compared to standard commercial grade alternatives.

Part Context

This part belongs to the 2N5401 series of PNP transistors manufactured by Central Semiconductor. The 'APP' suffix typically denotes aerospace or military-grade processing, while 'TIN/LEAD' specifies the terminal finish. This distinguishes it from lead-free variants like the 2N5401 APP PBFREE, which may have different packaging or environmental compliance certifications.