2N5401 PBFREE

$0.17

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-

SKU:13827472963d Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Download product information

2N5401 PBFREE

Overview

The Central Semiconductor Corp 2N5401 PBFREE is a silicon PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-92-3 package. It features a maximum collector-emitter voltage of 150 V and a collector-base voltage of 160 V, with an emitter-base voltage rating of 5 V. The device supports a continuous DC collector current of 600 mA and dissipates up to 625 mW of power. Key electrical characteristics include a transition frequency of 300 MHz and a collector-emitter saturation voltage of 500 mV. It operates within a temperature range of -65°C to +150°C.

Feature Summary

High-voltage capability suitable for demanding circuit applications
Robust radiation immunity for harsh environment operations
Hermetic packaging options available for space-grade reliability

Applications

Space and harsh environment electronic systems
Low current and high precision circuits
Preamplifier stages
Oscillator configurations
Current mirror setups

Procurement Notes

Verify the specific suffix against official datasheets, as variants like APP or HR denote distinct physical or environmental qualifications. Confirm RoHS compliance status and package type (TO-92 vs hermetic) directly with the manufacturer or authorized distributors. Ensure ordering requirements match the specific variant's minimum order quantities and lead times.

Selection Notes

Select this component when a PNP BJT with 150 V collector-emitter breakdown and 600 mA current capacity is required. Consider the TO-92-3 package for standard through-hole assembly. Evaluate the need for radiation hardness; if total ionizing dose immunity is critical, verify availability of the qualified hermetic variants rather than the standard commercial grade.

Part Context

This part belongs to the 2N5401 family of PNP transistors manufactured by Central Semiconductor. The product line includes various packages and qualification levels, ranging from standard commercial TO-92 units to rad-hardened versions meeting ESCC specifications. The manufacturer provides both surface mount and through-hole options across different voltage and current ratings within this series.