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Product Detailed Parameters
- Description：150V 600MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5401 TRA PBFREE is a silicon PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 150 V, a collector-base voltage of 160 V, and an emitter-base voltage of 5 V. The device supports a continuous DC collector current of 600 mA with a power dissipation rating of 625 mW. It operates within a temperature range of -65°C to +150°C and utilizes a TO-92-3 through-hole package.
Feature Summary
- PNP polarity configuration suitable for high-voltage switching circuits
- Silicon construction ensuring stable operation across wide thermal ranges
- Through-hole mounting capability in standard TO-92-3 packages
Applications
- General-purpose signal amplification
- High-voltage switching applications
- Complementary output stages in audio or power circuits
Procurement Notes
Verify the specific suffix 'TRA' against official manufacturer documentation to confirm tape-and-reel packaging status versus bulk availability. Ensure RoHS compliance markings align with the 'PBFREE' designation. Cross-reference datasheet revisions to confirm pinout consistency and electrical parameter tolerances before finalizing procurement specifications.
Selection Notes
Select this component when a PNP transistor with 150 V breakdown voltage and 600 mA current capacity is required in a low-power through-hole form factor. Compare gain bandwidth and saturation voltage requirements against circuit load conditions. Ensure thermal management strategies accommodate the 625 mW dissipation limit under expected operating loads.
Part Context
This part belongs to the 2N5401 family of small-signal PNP transistors manufactured by Central Semiconductor Corp. It serves as a complementary counterpart to NPN devices like the 2N5400, facilitating push-pull configurations. The component is widely used in discrete electronics where reliable high-voltage handling and moderate current drive are necessary in compact through-hole assemblies.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2N5401 TRA PBFREE were not identified in available verified sources. Consult manufacturer cross-reference guides for equivalent PNP transistors meeting identical voltage and current ratings.
