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Product Detailed Parameters
- Description：150V 600MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5401 TRA TIN/LEAD is a PNP silicon small-signal bipolar junction transistor housed in a TO-92-3 through-hole package. It supports a maximum collector current of 600 mA and a collector-emitter voltage of 150 V, with a collector-base voltage rating of 160 V. The device features a power dissipation capacity of 625 mW and a transition frequency of 300 MHz. Operating temperatures range from -65°C to +150°C, ensuring reliability across diverse environmental conditions.
Feature Summary
- High-voltage capability suitable for demanding circuit applications
- Hermetic sealing options available for radiation resistance
- Robust thermal performance for extended temperature ranges
Applications
- General-purpose switching circuits
- Low-current precision analog designs
- Harsh environment electronic systems
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm lead material composition and hermetic sealing requirements. Ensure the selected variant matches the intended operating temperature range and radiation hardness specifications for your application. Cross-reference datasheet revisions to confirm compliance with current industry standards before finalizing procurement decisions.
Selection Notes
Select this component when high-voltage handling and reliable switching are required in a compact through-hole form factor. Consider the 300 MHz transition frequency for moderate-speed signal processing tasks. Evaluate the thermal dissipation limits relative to your circuit's power requirements to ensure stable operation within the specified temperature boundaries without exceeding safe operating area constraints.
Part Context
This part belongs to the established 2N5401 family of PNP transistors, widely recognized for general-purpose use. Central Semiconductor offers variations including tin/lead terminations and potential hermetic packaging options. The component serves as a standard replacement for legacy designs requiring robust bipolar transistor performance in space-constrained or high-reliability environments.
Replacement Considerations
Direct substitutes include other manufacturers' 2N5401 variants meeting identical electrical specifications. Verify pinout compatibility and package dimensions when replacing existing components. Ensure thermal characteristics align with the original design requirements to maintain system stability.
