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Product Detailed Parameters
- Description：TRANS PNP 150V 0.3A TO-92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：630 mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The NXP USA Inc. 2N5401,116 is a PNP high-voltage bipolar junction transistor housed in a TO-92 (SOT54) plastic package. It supports a maximum collector current of 300 mA and withstands up to 150 V collector-emitter voltage. The device features a transition frequency ranging from 100 MHz to 300 MHz at -10 V and -10 mA. Thermal resistance from junction to ambient is rated at 200 K/W. DC current gain varies between 50 and 240 depending on the collector current level.
Feature Summary
- High voltage capability for robust switching applications
- Low current operation suitable for precision circuits
- Plastic through-hole packaging for standard mounting
Applications
- General purpose switching
- Amplification stages
- Telephony equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm exact package dimensions and marking codes. Ensure the component status aligns with current production schedules before finalizing design integration. Cross-reference thermal limits with actual board layout constraints to maintain safe operating temperatures during peak load conditions.
Selection Notes
Select this component when designing circuits requiring high voltage tolerance with moderate current handling capabilities. Consider the TO-92 package constraints for thermal management in enclosed spaces. Verify that the required DC current gain meets the minimum threshold for the intended amplification or switching application under expected operating temperatures.
Part Context
This part belongs to the 2N5401 series of PNP transistors originally specified by Philips Semiconductors. It serves as the complementary counterpart to the 2N5551 NPN transistor. The device is designed for general-purpose electronic applications where high voltage isolation and reliable switching performance are primary requirements.
Replacement Considerations
Direct substitutes include the 2N5551 complement pair configurations. Check equivalent specifications from other manufacturers such as Diotec Semiconductor or Unisonic Technologies for pin-compatible alternatives if sourcing becomes constrained.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is 150 V.
Does this transistor have an NPN complement?
Yes, the NPN complement is the 2N5551.
What is the typical DC current gain range?
The DC current gain (hFE) ranges from 50 to 240, depending on the collector current.
