SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2N5401_D10Z is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector-emitter voltage of -150 V and a collector current of -600 mA, with a maximum power dissipation of 625 mW. The device features a collector-base breakdown voltage of -160 V and an emitter-base breakdown voltage of -5 V. DC current gain ranges from 30 to 240 depending on the operating point. The transition frequency reaches up to 400 MHz, while output capacitance is specified at 6 pF.
Verify that the specific suffix matches the required pinout configuration, as variations exist within the series. Confirm RoHS compliance status through official documentation before integration. Ensure thermal management aligns with the 625 mW dissipation limit under expected ambient conditions. Cross-reference datasheet revisions to confirm electrical characteristics remain consistent with design requirements.
Select this component when a PNP transistor with high voltage capability and moderate current handling is required. The TO-92 package suits through-hole mounting for prototyping or low-volume production. Consider the noise figure and bandwidth specifications if used in sensitive analog front-end stages. Verify compatibility with existing PCB footprints and thermal constraints during the selection process.
This part belongs to the 2N5401 family of PNP transistors originally developed by Fairchild Semiconductor, now managed by onsemi. The series is widely recognized for its robustness in general-purpose electronic designs. The device serves as a standard solution for switching and amplification tasks where high voltage isolation is necessary.
Direct substitutes include other 2N5401 variants from different manufacturers, provided they match the TO-92 footprint and electrical ratings. Verify pinout compatibility, particularly regarding counter-collector configurations if applicable. Ensure replacement parts meet the same absolute maximum ratings to maintain circuit safety.