2N5401_J05Z

$0.04

Description：TRANS PNP 150V 0.6A TO-92-3
Series：-

SKU:98e16b991258 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 150V 0.6A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：400MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5401_J05Z

Overview

The onsemi 2N5401_J05Z is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage of -150 V and a collector-base voltage of -160 V. The device supports a maximum collector current of -600 mA with a power dissipation rating of 625 mW at 25°C. Electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency up to 400 MHz, and an output capacitance of 6 pF. Operating temperatures span from -55°C to +150°C junction temperature.

Feature Summary

PNP epitaxial silicon construction for reliable small-signal amplification
High collector-emitter breakdown voltage capability for robust operation
Wide DC current gain range suitable for diverse amplification requirements
Hermetic-style TO-92 through-hole mounting configuration

Applications

General-purpose amplifier circuits
Switching applications requiring high voltage tolerance
Low-noise signal processing stages

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout orientation and packaging details. Ensure that the component status aligns with current production availability, as legacy part numbers may undergo lifecycle changes. Cross-reference absolute maximum ratings with application stress limits to prevent device failure during procurement validation.

Selection Notes

Select this component when circuit designs require a PNP transistor with high voltage handling capabilities exceeding standard low-voltage alternatives. Evaluate the thermal management requirements based on the 625 mW dissipation limit and the specified junction temperature range. Confirm that the required DC current gain falls within the documented minimum and maximum bounds for the intended operating current levels.

Part Context

This component belongs to the 2N5401 series of PNP bipolar junction transistors manufactured by Fairchild Semiconductor, now part of onsemi. The datasheet indicates it is designed for general-purpose amplifier and switching applications. The device utilizes epitaxial silicon technology to achieve its specified electrical performance metrics within a compact three-terminal package.

Replacement Considerations

Consult official substitution guides for equivalent PNP transistors with matching voltage and current ratings. Verify pinout compatibility before replacing to ensure correct emitter, base, and collector connections in existing PCB layouts.