2N5401_J61Z

Overview

The onsemi 2N5401_J61Z is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector-emitter voltage of -150 V and a maximum collector current of -600 mA. The device dissipates up to 625 mW with a junction temperature rating of 150 °C. Electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency of 400 MHz, and a noise figure of 8 dB.

Feature Summary

• PNP epitaxial silicon construction for reliable signal amplification
• High collector-emitter breakdown voltage capability
• Low saturation voltage for efficient switching operations
• Wide operating temperature range suitable for diverse environments

Applications

• General-purpose amplifier circuits
• Switching applications requiring high voltage tolerance
• Audio signal processing stages
• Oscillator configurations

Procurement Notes

Verify the specific J61Z suffix against official manufacturer documentation to confirm exact binning or testing criteria. Confirm RoHS compliance status as datasheets may vary by production era. Ensure the TO-92 pinout matches the intended circuit design before integration.

Selection Notes

Select this component for designs requiring a robust PNP transistor with high voltage handling. Evaluate thermal management needs given the 625 mW dissipation limit. Compare hFE ranges against circuit requirements to ensure adequate gain margins are met under expected operating conditions.

Part Context

This part belongs to the standard 2N5401 series originally defined by Fairchild Semiconductor. The device is widely recognized as a general-purpose small-signal transistor. It serves as a foundational component in discrete electronics for both linear and digital logic interfacing tasks.

Replacement Considerations

Direct substitutes include the 2N5401YBU and 2N5401YTA from onsemi. Verify pin compatibility and electrical parameter overlaps before swapping components in existing designs.