2N5401NLBU

2N5401NLBU

$0.04
  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-

SKU:4bc8f42d12c2 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Download product information

2N5401NLBU

Overview

The onsemi 2N5401NLBU is a discontinued PNP epitaxial silicon transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of -150 V and a collector current rating of -600 mA. The device dissipates up to 625 mW with a junction temperature limit of 150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240, a transition frequency (fT) of 400 MHz, and a collector-base breakdown voltage of -160 V.

Feature Summary

  • PNP epitaxial silicon construction for general-purpose amplification
  • High collector-emitter voltage capability suitable for switching applications
  • Low saturation voltage for efficient power handling

Applications

  • General-purpose amplifier circuits
  • Switching applications requiring high voltage isolation
  • Audio signal processing stages

Procurement Notes

Verify component status as the 2N5401NLBU is officially discontinued by onsemi. Confirm availability of direct substitutes such as the 2N5401YBU before finalizing procurement plans. Ensure all ordering documentation reflects the obsolete nature of this specific part number to prevent fulfillment errors.

Selection Notes

Select this component only if legacy compatibility is required or if the specific pinout matches existing board layouts. Evaluate alternative active parts like the 2N5401YBU for new designs due to the discontinuation status. Verify that thermal management supports the 625 mW dissipation limit within the intended operating environment.

Part Context

This component belongs to the 2N5401 series of PNP bipolar junction transistors originally manufactured by Fairchild Semiconductor, now part of onsemi. The NLBU suffix denotes the specific TO-92-3 packaging variant. The datasheet originates from Fairchild Semiconductor Rev. B, May 2004, prior to full integration into onsemi's product portfolio.

Replacement Considerations

The 2N5401YBU is listed as a direct replacement by onsemi.

FAQ

What is the pin configuration for the 2N5401?

With the flat side facing forward and leads pointing down, the pins are Emitter (1), Base (2), and Collector (3).

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BVCBO) is -160 V.

2N5401NLBU2N5401NLBU
$0.04
Buy Now