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The onsemi 2N5401NLBU is a discontinued PNP epitaxial silicon transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of -150 V and a collector current rating of -600 mA. The device dissipates up to 625 mW with a junction temperature limit of 150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240, a transition frequency (fT) of 400 MHz, and a collector-base breakdown voltage of -160 V.
Verify component status as the 2N5401NLBU is officially discontinued by onsemi. Confirm availability of direct substitutes such as the 2N5401YBU before finalizing procurement plans. Ensure all ordering documentation reflects the obsolete nature of this specific part number to prevent fulfillment errors.
Select this component only if legacy compatibility is required or if the specific pinout matches existing board layouts. Evaluate alternative active parts like the 2N5401YBU for new designs due to the discontinuation status. Verify that thermal management supports the 625 mW dissipation limit within the intended operating environment.
This component belongs to the 2N5401 series of PNP bipolar junction transistors originally manufactured by Fairchild Semiconductor, now part of onsemi. The NLBU suffix denotes the specific TO-92-3 packaging variant. The datasheet originates from Fairchild Semiconductor Rev. B, May 2004, prior to full integration into onsemi's product portfolio.
The 2N5401YBU is listed as a direct replacement by onsemi.
With the flat side facing forward and leads pointing down, the pins are Emitter (1), Base (2), and Collector (3).
The maximum collector-base breakdown voltage (BVCBO) is -160 V.