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Product Detailed Parameters
- Description：TRANS PNP 150V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：150 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5401RLRAG is a PNP amplifier transistor manufactured in a TO-92 (TO-226) package. It features a collector-emitter voltage of -150 V and a maximum collector current of -600 mA. The device dissipates up to 625 mW with a junction-to-ambient thermal resistance of 200 °C/W. Operating temperatures range from -55°C to +150°C. DC current gain varies by class, with standard minimums at 60 for IC = -10 mA. The transition frequency reaches 400 MHz.
Feature Summary
- Designed as an amplifier transistor for general-purpose applications
- Capable of operating under severe environmental conditions
- Provides high immunity to total ionizing dose radiation exposure
Applications
- Low current precision circuits
- Preamplifiers
- Oscillators
- Current mirror configurations
Procurement Notes
Verify the exact ordering suffix against the official datasheet to confirm packing method and pinout configuration. Ensure the component meets specific radiation hardness requirements if used in harsh environments. Confirm compliance with ESCC specifications for space-grade applications. Validate that the package type matches the intended PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when high voltage handling and moderate current amplification are required in a compact through-hole package. Consider the specific hFE class needed for the application's gain requirements. Evaluate thermal management capabilities given the 625 mW dissipation limit. Verify compatibility with existing circuit designs requiring PNP switching or linear amplification.
Part Context
This part belongs to the 2N5401 series of bipolar junction transistors. It is derived from Fairchild Semiconductor designs now managed by onsemi. The device is available in various packaging options including bulk and tape-and-reel formats. It serves as a robust solution for analog signal processing tasks requiring reliable performance across wide temperature ranges.
Replacement Considerations
Direct substitutes include 2N5401YBU and 2N5401NLBU. Cross-reference electrical parameters such as breakdown voltages and current gains to ensure functional equivalence. Verify package dimensions and pin assignments match the original design requirements.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at -150 V.
Does this transistor offer radiation hardness?
Yes, the 2N5401 series provides high immunity to total ionizing dose (TID) and is suitable for harsh environment applications.
What is the typical current gain bandwidth product?
The current gain bandwidth product (fT) is typically 400 MHz at IC = -10 mA and VCE = -10 V.
