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The onsemi 2N5401TAR is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage of -150 V and a collector-base voltage of -160 V. The device supports a maximum collector current of -600 mA with a total power dissipation of 625 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency up to 400 MHz, and an output capacitance of 6 pF. Operating temperatures range from -55°C to 150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm pinout configuration and packaging type. Ensure the component meets required radiation hardness or environmental specifications if used in harsh conditions. Cross-reference datasheet revisions to validate absolute maximum ratings before finalizing procurement orders.
Select this component for designs requiring high-voltage PNP switching or amplification within a standard through-hole footprint. Evaluate the DC current gain requirements against the specified minimum values for your operating point. Consider thermal management strategies given the 625 mW dissipation limit in enclosed environments.
This part belongs to the 2N5401 series of general-purpose PNP transistors originally developed by Fairchild Semiconductor and now managed by onsemi. The series is widely recognized for its versatility in low-power analog applications. The 'TAR' suffix typically denotes tape-and-reel packaging for automated assembly processes.
The suffix '-C' indicates a counter-collector configuration where the pin order is Emitter (1), Collector (2), and Base (3).
The noise figure is typically 8 dB when measured at a collector current of -250 µA and a source resistance of 1 kΩ.
No, the product is not authorized for use as a critical component in life support devices without express written approval from the manufacturer.