2N5401TAR

2N5401TAR

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-

SKU:068bf31973a2 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5401TAR

Overview

The onsemi 2N5401TAR is a PNP epitaxial silicon transistor housed in a TO-92 package. It features a collector-emitter voltage of -150 V and a collector-base voltage of -160 V. The device supports a maximum collector current of -600 mA with a total power dissipation of 625 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency up to 400 MHz, and an output capacitance of 6 pF. Operating temperatures range from -55°C to 150°C.

Feature Summary

  • PNP epitaxial silicon construction for reliable small-signal amplification
  • High collector-emitter breakdown voltage capability of 150 V
  • Low noise figure suitable for sensitive audio or RF front-end stages
  • Robust thermal performance with 625 mW power dissipation rating

Applications

  • General-purpose amplifier circuits
  • Audio preamplifier stages
  • Oscillator configurations
  • Current mirror applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm pinout configuration and packaging type. Ensure the component meets required radiation hardness or environmental specifications if used in harsh conditions. Cross-reference datasheet revisions to validate absolute maximum ratings before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-voltage PNP switching or amplification within a standard through-hole footprint. Evaluate the DC current gain requirements against the specified minimum values for your operating point. Consider thermal management strategies given the 625 mW dissipation limit in enclosed environments.

Part Context

This part belongs to the 2N5401 series of general-purpose PNP transistors originally developed by Fairchild Semiconductor and now managed by onsemi. The series is widely recognized for its versatility in low-power analog applications. The 'TAR' suffix typically denotes tape-and-reel packaging for automated assembly processes.

Replacement Considerations

  • 2N5401
  • SOC5401

FAQ

What does the suffix '-C' indicate regarding the pinout?

The suffix '-C' indicates a counter-collector configuration where the pin order is Emitter (1), Collector (2), and Base (3).

What is the typical noise figure for this transistor?

The noise figure is typically 8 dB when measured at a collector current of -250 µA and a source resistance of 1 kΩ.

Is this transistor suitable for life support devices?

No, the product is not authorized for use as a critical component in life support devices without express written approval from the manufacturer.

2N5401TAR2N5401TAR

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