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The onsemi 2N5401YBU is a PNP silicon amplifier transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage of -150 V, a collector-base voltage of -160 V, and an emitter-base voltage of -5 V. The device supports a maximum collector current of -600 mA with a total power dissipation of 625 mW. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240 depending on the class and operating conditions, and a transition frequency (fT) up to 400 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to ensure correct packaging and pinout configuration. Confirm that the component meets all absolute maximum ratings for your intended operating environment. Cross-reference datasheet revisions to ensure compatibility with existing design specifications. Ensure compliance with relevant safety and environmental standards required for your application.
Select this component when a PNP transistor with high voltage ratings and moderate current handling is required. Consider the TO-92-3 package constraints for thermal management and board space. Evaluate the hFE class requirements for your specific gain needs. Verify that the operating temperature range aligns with your system's environmental conditions.
The 2N5401 series represents a standard NPN/PNP transistor family widely used in discrete semiconductor applications. This specific part is manufactured by onsemi, formerly Fairchild Semiconductor. The YBU suffix indicates bulk packaging within the TO-92 form factor. It serves as a common replacement for legacy designs requiring reliable bipolar junction transistor performance.
The 2N5401NLBU is listed as a discontinued direct substitute available from onsemi.