2N5401ZL1G

Overview

The onsemi 2N5401ZL1G is a PNP silicon amplifier transistor housed in a TO-92 package. It features a collector-emitter voltage of 150 Vdc and a continuous collector current of 600 mAdc. The device supports an operating junction temperature range from -55°C to +150°C with a total device dissipation of 625 mW at 25°C ambient. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 240, a transition frequency (fT) up to 400 MHz, and a collector cutoff current (ICBO) maximum of 50 nAdc.

Feature Summary

• PNP silicon construction designed for amplifier applications
• High breakdown voltage capability for robust circuit operation
• Wide thermal operating range suitable for demanding environments

Applications

• General-purpose amplifier circuits
• Low-noise signal processing stages
• Switching applications requiring high voltage tolerance

Procurement Notes

Verify the specific ordering suffix ZL1G against official documentation to confirm tape and ammo box packaging specifications. Ensure compliance with RoHS standards by confirming the presence of the G suffix indicating lead-free status. Cross-reference the part number with the manufacturer's latest datasheet revision to validate electrical parameters and pin configurations before procurement.

Selection Notes

Select this component when a PNP transistor with a 150 V collector-emitter rating and 600 mA continuous current capacity is required. Consider the TO-92 through-hole package for standard prototyping or low-volume production. Evaluate the hFE range and noise figure specifications against circuit requirements to ensure adequate signal amplification and minimal interference in sensitive analog designs.

Part Context

This component belongs to the 2N540x series of PNP silicon transistors manufactured by onsemi. It shares the same electrical ratings and physical dimensions as the 2N5400, differing primarily in breakdown voltage specifications. The series is designated as a preferred device for future use, offering optimal value and availability within the manufacturer's general-purpose transistor portfolio.

Replacement Considerations

• 2N5401
• 2N5401RLRA

FAQ

What is the pin configuration for the 2N5401ZL1G?

Viewed from the flat side with leads down, Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector.

What is the maximum power dissipation at case temperature?

The total device dissipation is 1.5 Watts when the case temperature is maintained at 25°C.

Does the ZL1G suffix indicate a different electrical function?

No, the ZL1G suffix indicates Pb-Free packaging and specific tape and ammo box shipping quantities; it does not alter the electrical characteristics compared to the base 2N5401 model.