2N5407

Overview

The Microchip Technology 2N5407 is a small signal PNP silicon bipolar junction transistor housed in a hermetically sealed TO-5 metal can package. It features a maximum collector current of 5A and a collector-emitter breakdown voltage of 100V. The device supports a maximum power dissipation of 7.5W at 25°C case temperature, with a transition frequency of 40MHz and a minimum DC current gain (hFE) of 40.

Feature Summary

• Hermetically sealed metal TO-5 package for reliable operation
• High collector current capability up to 5A
• Suitable for relay switching and resistor logic circuits

Applications

• Relay switching applications
• Resistor logic circuits
• General purpose amplification

Procurement Notes

Verify the specific manufacturer lot and screening options when sourcing this component. As a through-hole device, ensure compatibility with existing PCB layouts. Confirm RoHS compliance status if required by project specifications, as historical data indicates variations across different production runs and manufacturers.

Selection Notes

Select the 2N5407 for high-current PNP switching tasks requiring robust packaging. Its 100V rating and 5A capacity make it suitable for driving relays or loads in industrial environments. Consider thermal management due to the 7.5W dissipation limit in the TO-5 form factor.

Part Context

This component belongs to the standard small-signal PNP transistor family, widely used in legacy and industrial electronics. It serves as a direct replacement for older designs utilizing similar NPN/PNP pairs, offering consistent performance in discrete logic and power control stages.

Replacement Considerations

Equivalent parts include the 2N5406 (NPN counterpart) and generic TO-5 PNP transistors with matching 5A/100V ratings. Verify pinout compatibility and thermal characteristics before substitution.