2N5411

Overview

The Microchip Technology 2N5411 is a silicon PNP power transistor designed for general-purpose amplification and switching applications. It features a transition frequency of 40 MHz and a maximum collector dissipation of 30 W. The device utilizes a TO-111 package configuration, providing robust performance in high-voltage environments with an 80V collector-emitter voltage rating.

Feature Summary

• High power dissipation capability suitable for demanding thermal conditions
• Fast switching speed enabled by a 40 MHz transition frequency
• Robust construction for high-voltage operation up to 80V

Applications

• General-purpose power amplification circuits
• High-voltage switching applications
• Industrial control systems requiring PNP power transistors

Procurement Notes

Verify the specific manufacturer source, as the 2N5411 designation is historically associated with multiple vendors including ON Semiconductor and others. Confirm that the supplied component matches the required TO-111 package and electrical specifications before integration into designs.

Selection Notes

Select this component when a PNP transistor with 30W power handling and 80V breakdown is required. Ensure the application circuit accounts for the thermal management needs associated with the TO-111 package and the specific gain characteristics typical of this class of power transistor.

Part Context

The 2N5411 belongs to the family of silicon PNP power transistors widely used in legacy and industrial electronics. While Microchip Technology is listed as the brand, this part number is also commonly sourced from other semiconductor manufacturers such as ON Semiconductor, indicating its status as a standard industry specification rather than a proprietary unique design.

Replacement Considerations

Equivalent parts include the 2N5400 series and other generic PNP power transistors rated for similar voltage and current levels. Verify pinout compatibility and thermal resistance values when substituting.