2N5412

2N5412

$382.40
  • Description:TRANS PNP 60V 15A TO-61
  • Series:-

SKU:3d78a1e76aa0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 60V 15A TO-61
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):15 A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:100 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package:TO-61
  • Grade:-
  • Qualification:-

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2N5412

Overview

The Microchip Technology 2N5412 is a single PNP bipolar junction transistor designed for high-power applications. It features a collector-emitter breakdown voltage of 60 V and supports a maximum continuous collector current of 15 A. The device has a maximum power dissipation rating of 100 W, making it suitable for robust switching tasks. It utilizes a stud mount package configuration to facilitate effective thermal management. The component includes a transition frequency of 60 MHz and forward current transfer characteristics appropriate for its class.

Feature Summary

  • High power handling capability with 100 W dissipation rating
  • Robust current handling up to 15 A collector current
  • Stud mount package design for efficient heat dissipation

Applications

  • High-power switching circuits
  • Industrial control systems requiring robust PNP transistors
  • Power supply regulation stages

Procurement Notes

Verify the specific manufacturer source when ordering, as the 2N5412 designation may be produced by multiple vendors including Microchip Technology. Confirm that the physical package matches the required stud mount specifications for your thermal design. Ensure the datasheet aligns with the intended voltage and current ratings for your specific application requirements before finalizing procurement.

Selection Notes

Select this component when a high-current PNP transistor with significant power dissipation capacity is required. The 60 V breakdown voltage limits suitability for higher voltage rails. Consider the stud mount package constraints regarding mechanical mounting and thermal interface materials. Evaluate the 15 A current limit against peak load demands to ensure reliable operation within safe operating areas.

Part Context

The 2N5412 belongs to the category of single bipolar junction transistors (BJTs). It is classified specifically as a PNP type device. This part number represents a legacy or standard industrial component often used in older designs or specific high-power analog applications where stud-mounted packages are preferred for thermal performance over surface-mount alternatives.

Replacement Considerations

Cross-reference with other manufacturers offering the 2N5412 specification to ensure pinout and thermal characteristics match. Verify that substitute parts maintain the 100 W power rating and 15 A current capacity. Check for any variations in transition frequency or gain if high-speed switching is involved.

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