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The Microchip Technology 2N5415U4 is a single PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector-emitter voltage of 200 V and a continuous collector current of 1 A. The device supports a power dissipation of 1 W and operates within a junction temperature range of -65°C to 200°C. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at 50 mA and 10 V, with a collector cutoff current of 50 µA maximum. The component utilizes a 3-SMD, no-lead U4 package.
Verify the specific suffix against official Microchip documentation to confirm package type and electrical tolerances. Confirm RoHS compliance status as indicated in the latest datasheet revision. Check for recent Product Change Notifications regarding assembly sites or labeling updates before finalizing procurement specifications.
Select this component when a high-voltage PNP transistor is required in a surface-mount form factor. Ensure the design accommodates the 1 W power dissipation limit and the specific hFE requirements at the intended operating current. Verify that the U4 package footprint matches the target PCB layout constraints.
This part belongs to the 2N5415 series of PNP transistors manufactured by Microchip Technology. It shares core electrical specifications with through-hole variants but differs in physical packaging. The U4 designation specifically identifies the surface-mount configuration, distinguishing it from standard axial leaded versions while maintaining equivalent voltage and current ratings.
Cross-reference with other 2N5415 variants only if package compatibility is addressed. Verify that substitute components match the 200 V rating and 1 A current capacity. Confirm that any alternative offers comparable thermal resistance and junction temperature limits.