2N5416

Overview

The Microchip Technology 2N5416 is a silicon PNP power bipolar junction transistor (BJT) designed for high-voltage applications. It features a collector-emitter breakdown voltage of 300 V and a collector-base voltage rating of 350 V, with an emitter-base voltage limit of 6 V. The device supports a maximum continuous DC collector current of 1 A and dissipates up to 1 W of power. It operates within a temperature range of -65 °C to +200 °C. The component utilizes a TO-5-3 through-hole package and provides a DC current gain (hFE) ranging from 15 to 120.

Feature Summary

• High voltage capability with 300 V collector-emitter breakdown
• Wide thermal operating range extending to +200 °C
• Robust 1 A continuous collector current handling
• Hermetic TO-5-3 metal can packaging

Applications

• High-voltage switching circuits
• Power amplifier stages
• Industrial control systems requiring wide temperature tolerance

Procurement Notes

Verify the specific manufacturing lot and date code upon receipt to ensure compliance with project requirements. Confirm that the TO-5-3 hermetic seal integrity meets environmental standards. Cross-reference the datasheet revision against the provided documentation to validate electrical parameters. Ensure proper handling procedures are followed due to the sensitive nature of the semiconductor junctions during installation.

Selection Notes

Select this component when a high-voltage PNP transistor is required in a through-hole configuration. The 300 V rating distinguishes it from lower-voltage alternatives like the 2N5415U4. Consider the TO-5-3 package constraints regarding board space and mounting hardware. Evaluate the thermal management needs given the 1 W power dissipation limit and the specific hFE characteristics at intended operating currents.

Part Context

This part belongs to the legacy 2N541x series of high-voltage PNP transistors manufactured by Microchip Technology. It serves as the through-hole equivalent to surface-mount variants such as the 2N5416U4. The series is characterized by its ability to operate at elevated temperatures and handle significant voltage stresses, making it suitable for rugged electronic environments where reliability is critical.

Replacement Considerations

The 2N5416U4 is a surface-mount alternative within the same family but differs in package type. Direct pin-for-pin replacement is not possible due to the distinct TO-5-3 through-hole versus SMD form factors. Verify circuit layout compatibility before considering any substitution.