2N5416 PBFREE

$1.44

Description：TRANS PNP 300V 1A TO-39
Series：-

SKU:7e58204a0024 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 300V 1A TO-39
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：2V @ 5mA, 50mA
Current - Collector Cutoff (Max)：50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 50mA, 10V
Power - Max：1 W
Frequency - Transition：15MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39
Grade：-
Qualification：-

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2N5416 PBFREE

Overview

The Central Semiconductor Corp 2N5416 PBFREE is a silicon PNP power transistor housed in a TO-39 metal can package. It supports a continuous collector current of 1.0 A and offers high voltage ratings, including a collector-emitter breakdown voltage (BVCEO) of 300 V and a collector-base voltage (VCEO) of 350 V. The device operates within a junction temperature range of -65°C to +200°C with a maximum power dissipation of 1.0 W.

Feature Summary

Designed for consumer and industrial line-operated applications
High voltage capability suitable for demanding switching environments
Robust thermal performance with extended operating temperature limits

Applications

Consumer line-operated circuits
Industrial line-operated systems
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix when purchasing. The PBFREE designation indicates lead-free plating. Requesting tin/lead plated devices requires adding the TIN/LEAD suffix to the part number during ordering. Confirm mechanical dimensions against the TO-39 case outline provided in the datasheet to ensure compatibility with existing board layouts and mounting hardware.

Selection Notes

Select this component for designs requiring high-voltage PNP switching capabilities. Compare the 300 V collector-emitter rating against circuit peak voltages to ensure adequate safety margins. Evaluate the 1.0 A continuous current limit against load requirements. Consider the TO-39 through-hole package constraints for PCB layout and thermal management strategies relative to the 1.0 W power dissipation specification.

Part Context

This device belongs to the 2N5415/2N5416 series of silicon PNP transistors manufactured by Central Semiconductor Corp. The series shares similar structural characteristics but differs in voltage ratings, with the 2N5416 offering higher breakdown voltages compared to the 2N5415 variant.