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Product Detailed Parameters
- Description：300V 1A 1W TH TRANSISTOR-SMALL S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 10V
- Power - Max：1 W
- Frequency - Transition：15MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5416 TIN/LEAD is a PNP silicon power transistor housed in a TO-39 metal can package. It supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 300 V. The device features a minimum DC current gain (hFE) of 30 at specified test conditions, with a maximum power dissipation of 1 W. Operating temperatures range from -65°C to +200°C junction temperature.
Feature Summary
- High voltage capability for robust switching applications
- Metal can construction for thermal stability
- Wide operating temperature range
Applications
- High voltage switching circuits
- Power amplifier stages
- Industrial control systems
Procurement Notes
Verify the specific datasheet version for the 2N5416 TIN/LEAD variant, as Central Semiconductor may have updated electrical limits or pin configurations over time. Confirm that the tin/lead finish meets project requirements if lead-free compliance is mandatory. Cross-reference the manufacturer part number against official distributor catalogs to ensure accurate identification before ordering.
Selection Notes
Select this component when high voltage blocking capability and moderate current handling are required in a through-hole metal package. Compare hFE ranges and saturation voltages against alternative PNP transistors to ensure compatibility with drive circuitry. Ensure the thermal management design accommodates the 1 W power dissipation limit within the specified junction temperature range.
Part Context
This part belongs to the 2N5416 series of PNP silicon power transistors manufactured by Central Semiconductor Corp. It is functionally similar to other standard PNP power transistors but distinguished by its specific voltage ratings and TO-39 packaging. The series is designed for general-purpose power switching and amplification tasks in electronic circuits.
Replacement Considerations
Check for direct cross-references such as the 2N5416 equivalent from other manufacturers. Verify pinout compatibility and electrical parameter overlaps before substituting. Ensure any replacement part meets the same voltage, current, and thermal specifications.
