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Product Detailed Parameters
- Description：TRANS PNP 300V 1A U4
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：300 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 10V
- Power - Max：1 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：U4
- Grade：Military
- Qualification：MIL-PRF-19500/485
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Overview
The Microchip Technology 2N5416U4 is a silicon PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage (VCEO) of 80 V. The device supports a collector-base voltage (VCBO) of 350 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 1 W, with a DC current gain (hFE) ranging from 15 to 120. Operating temperatures span from -65°C to +200°C TJ.
Feature Summary
- High-temperature operation capability up to 200°C junction temperature
- Surface-mount U4 package configuration for automated assembly
- PNP single transistor architecture with high collector-base voltage rating
Applications
- High-voltage switching circuits
- Power management systems requiring wide thermal tolerance
- Industrial control interfaces
Procurement Notes
Verify the specific suffix U4 against the official datasheet to confirm the SMD package type and electrical parameters. Ensure compatibility with the target PCB footprint and thermal management requirements. Confirm RoHS status and manufacturing origin details through the manufacturer's documentation before integration into production designs.
Selection Notes
Select this component when a PNP BJT with high collector-base voltage and extended temperature range is required in a surface-mount form factor. Compare the 80 V VCEO rating against circuit requirements to ensure adequate margin. Consider the 1 W power dissipation limit and thermal resistance characteristics for heat sinking or board layout planning.
Part Context
This part belongs to Microchip's discrete semiconductor portfolio, specifically within the bipolar transistor category. It serves as a surface-mount alternative to through-hole variants like the 2N5416, offering similar electrical performance in a compact U4 package suitable for modern PCB assembly techniques.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications carefully if considering cross-references from other manufacturers.
