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The 2N5416UA is a single PNP bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 300 V and a continuous collector current of 1 A. The device is designed for surface mount applications in the UA package, offering a power dissipation rating of 750 mW. It utilizes silicon technology and operates within a temperature range of -65°C to +150°C. The component provides a minimum DC current gain (hFE) of 15 at 1 mA and 10 V, with a maximum hFE of 120 at 50 mA and 10 V.
Verify the specific ordering suffix against official Microchip Technology documentation to ensure correct package type and tape/reel specifications. Confirm that the requested variant matches the required surface mount footprint and thermal characteristics for the intended PCB layout. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards and material composition requirements.
Select this component when high voltage isolation and moderate current handling are required in a compact surface mount form factor. Ensure the application circuit design accounts for the 300 V breakdown rating and the 750 mW thermal dissipation limits. Verify that the operating temperature range aligns with the environmental conditions of the final product deployment scenario.
This part belongs to the Microchip Technology single bipolar transistor family. It serves as a high-voltage alternative to lower-rated general-purpose transistors. The UA package designation indicates a specific surface mount configuration distinct from through-hole variants like the TO-39 metal package found in other 2N5416 models.
Public confirmed substitute part numbers: None.