2N5416UAC

Overview

The Microchip Technology 2N5416UAC is a single PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features a collector-emitter breakdown voltage of 300 V and a maximum continuous collector current of 1 A. The device is rated for a power dissipation of 750 mW. It utilizes a 4-SMD, No Lead package configuration to facilitate compact circuit board layouts.

Feature Summary

• High voltage capability with 300 V collector-emitter breakdown rating
• Robust current handling with 1 A maximum collector current specification
• Surface-mount construction in a leadless SMD package format

Applications

• High-voltage switching circuits
• Power management modules requiring PNP topology
• Industrial control systems utilizing surface-mount transistors

Procurement Notes

Verify the manufacturer designation as Microchip Technology when sourcing this component. Confirm the specific package type matches the 4-SMD, No Lead requirement for your assembly process. Ensure that the 300 V and 1 A ratings align with your system's electrical constraints before finalizing procurement orders.

Selection Notes

Select this component when a high-voltage PNP transistor is required in a surface-mount form factor. The 300 V rating distinguishes it from standard low-voltage alternatives. Consider the 750 mW power dissipation limit during thermal design analysis to ensure reliable operation within the specified operating temperature range.

Part Context

This part belongs to the family of single bipolar junction transistors manufactured by Microchip Technology. It serves as a discrete semiconductor solution for power switching applications where space efficiency and high voltage tolerance are critical design parameters for electronic hardware implementations.