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Product Detailed Parameters
- Description：TRANS PNP 80V 7A TO-66
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：7:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 7A, 80V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5427 is a silicon NPN power bipolar junction transistor designed for high-power applications. It features a maximum collector current of 7.0 A and a power dissipation rating of 40 W. The device supports a collector-emitter voltage of 80 V and operates within a temperature range of -65°C to +200°C. Packaged in the TO-213AA (TO-66) through-hole format, it exhibits a transition frequency of 30 MHz and a collector-emitter saturation voltage of 700 mV at full load.
Feature Summary
- High power handling capability with 40 W dissipation rating
- Extended thermal stability supporting operation up to 200°C
- Low collector-emitter saturation voltage for efficient switching
- Robust construction utilizing the TO-66 package
Applications
- High-power switching circuits
- Wide-band amplifier stages
- Industrial power control systems
Procurement Notes
Verify the specific manufacturer designation when sourcing, as Central Semiconductor and Mospec also produce this part number. Confirm the lead type availability, such as tin/lead variants, against project requirements. Ensure the TO-66 package dimensions match the intended heatsink interface. Cross-reference datasheet parameters like VCE(sat) across different suppliers to ensure consistency in performance specifications.
Selection Notes
Select this component for applications requiring high current capacity and robust thermal management. The TO-66 package facilitates effective heat dissipation for continuous high-power operations. Consider the 80 V breakdown voltage limit when designing circuit topologies. Evaluate the 30 MHz transition frequency to ensure suitability for the target signal bandwidth requirements.
Part Context
The 2N5427 belongs to the class of standard NPN power transistors widely used in industrial electronics. It serves as a critical active element in power regulation and amplification modules. The TO-66 housing provides mechanical durability and thermal conductivity essential for heavy-duty environments.
Replacement Considerations
Direct substitutes include the 2N5429 PNP counterpart for complementary designs. Verify pinout compatibility and thermal resistance values before integrating alternative manufacturers' versions into existing layouts.
