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Product Detailed Parameters
- Description：NPN TRANSISTOR
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5429 is a medium-power NPN silicon bipolar junction transistor designed for robust switching and amplification applications. It operates within a collector current range of up to 7A and withstands voltages up to 80V, delivering significant power handling capabilities. The device utilizes a hermetically sealed TO-66 (TO-213AA) package, ensuring reliable performance in demanding environments. Key electrical characteristics include low collector saturation voltage and an excellent safe operating area, which facilitate efficient operation in wide-band amplifier circuits and high-speed switching tasks.
Feature Summary
- Hermetically sealed TO-66 package for environmental reliability
- Low collector saturation voltage for efficient switching
- Excellent safe operating area for robust performance
- Designed for wide-band amplifier and switching applications
Applications
- High-speed switching circuits
- Wide-band amplifier applications
- Medium-power signal processing
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as it is a standard military-style part number produced by multiple vendors including Microchip and others. Confirm that the received unit matches the required hermetic seal specifications and pinout configuration for the TO-66 package. Ensure compatibility with existing thermal management solutions due to the power dissipation requirements of the device.
Selection Notes
Select the 2N5429 when a hermetically sealed NPN transistor with high current capacity is required for critical applications. Its TO-66 package offers superior protection against moisture and contaminants compared to plastic packages. Consider its low saturation voltage for minimizing power loss in switching modes and its wide operating frequency range for amplifier designs requiring stable gain.
Part Context
The 2N5429 belongs to the family of medium-power NPN silicon transistors housed in metal can packages. It serves as a legacy but reliable solution for applications where hermetic sealing is mandatory. The component bridges the gap between small-signal devices and higher-power modules, offering a balance of current handling and voltage tolerance in a standardized form factor suitable for industrial and aerospace use.
Replacement Considerations
Consult official datasheets from alternative manufacturers such as Mospec or API Electronics for direct pin-compatible substitutes. Verify that any replacement maintains the TO-66 package dimensions and hermetic seal integrity. Ensure the substitute part meets or exceeds the 7A current and 80V voltage ratings specified for the original Microchip Technology device.
