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Product Detailed Parameters
- Description：NPN TRANSISTOR
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5430 is a power NPN silicon bipolar junction transistor housed in a TO-66 metal flange mount package. It features a maximum collector current of 7A and a collector-emitter breakdown voltage of 100V. The device has a minimum DC current gain (hFE) of 60 and utilizes a single-element configuration with two pins.
Feature Summary
- Constructed from silicon material for robust power handling capabilities
- Utilizes a metal TO-66 flange mount package for efficient thermal dissipation
- Designed as a single-element NPN transistor for high-current applications
Applications
- High-power switching circuits
- Linear amplifier stages
- Industrial control systems requiring robust NPN transistors
Procurement Notes
Verify the specific revision or suffix if available, as standard 2N5430 parts may not always carry explicit military qualifiers unless specified. Confirm RoHS compliance status, as older TO-66 packages often fall outside modern environmental directives. Ensure the supplier provides official datasheets confirming the 7A/100V ratings to avoid counterfeit or mislabeled components.
Selection Notes
Select this component when a hermetically sealed metal package is required for harsh environments. The TO-66 form factor offers superior heat sinking compared to plastic equivalents. Consider the 100V rating and 7A continuous current limits against the specific load requirements. Verify that the mounting hole pattern matches the design constraints.
Part Context
This part belongs to the legacy power transistor category, often used in aerospace and military-grade electronics due to its metal construction. It serves as a fundamental discrete semiconductor device for amplification and switching. The TO-66 package is distinct for its round metal case and flange, providing a direct thermal path to the heatsink via the collector terminal.
Replacement Considerations
Cross-reference with other TO-66 NPN power transistors such as the 2N3055 series if voltage and current margins allow. Verify pinout compatibility, as some replacements may differ in terminal arrangement. Check thermal resistance specifications to ensure equivalent heat dissipation performance.
