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Product Detailed Parameters
- Description：JFET N-CH 25V TO206AC
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：100 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 3 nA
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 0V
- Resistance - RDS(On)：-
- Power - Max：300 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AC, TO-52-3 Metal Can
- Supplier Device Package：TO-206AC (TO-52)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix 2N5433-E3 is an N-channel JFET housed in a hermetically sealed TO-206AC (TO-52) package. It features a gate-source cutoff voltage range of -3 V to -9 V and a maximum on-resistance of 7 Ω. The device exhibits a typical turn-on time of 2.5 ns, a saturation drain current of 150 mA, and a gate-source breakdown voltage of -25 V.
Feature Summary
- Hermetically sealed TO-206AC (TO-52) package suitable for MIL-S-19500 processing
- Fast switching performance with a typical turn-on time of 2.5 ns
- High off-isolation capability with a typical drain cutoff current of 10 pA
- Low insertion loss and negligible off-error for high accuracy
Applications
- Analog switches
- Choppers
- Sample-and-hold circuits
- Normally on switches
- Current limiters
Procurement Notes
Verify the component against the official Vishay datasheet Document Number 70245. Confirm that the physical package matches the TO-206AC (TO-52) specification. Ensure the part number suffix corresponds to the specific manufacturing revision required for your design.
Selection Notes
Select this component when low on-resistance and fast switching are critical. The -3 V to -9 V VGS(off) range provides flexibility for various biasing requirements. Consider the TO-206AC package if hermetic sealing or military-grade processing per MIL-S-19500 is necessary for the application environment.
Part Context
This device belongs to the 2N5432/5433/5434 series of N-channel JFETs from Vishay Siliconix. While sharing similar electrical characteristics, the 2N5433 is distinguished by its specific gate-source cutoff voltage range of -3 V to -9 V, differentiating it from the 2N5432 and 2N5434 variants.
Replacement Considerations
The 2N5432-E3 and 2N5434-E3 are direct functional substitutes within the same series. Verify that the alternative part's VGS(off) range aligns with the circuit requirements before substitution.
FAQ
What is the maximum power dissipation for the 2N5433-E3?
The maximum power dissipation is 300 mW at 25°C ambient temperature, with a derating factor of 2.4 mW/°C above 25°C.
Is the 2N5433-E3 suitable for high-frequency applications?
Yes, the device offers good frequency response and low capacitance, making it suitable for high-speed analog circuit performance.
What is the operating junction temperature range?
The operating junction temperature range is -55°C to +150°C.
