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The onsemi 2N5457_D26Z is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) housed in a lead-free TO-92 package. It operates in depletion mode with a maximum drain-source voltage of 25 V and a continuous drain current of 10 mA. The device features a typical gate-source cutoff voltage of -0.5 V at 1 µA and a maximum feedback capacitance of 3 pF. Power dissipation is rated at 310 mW, supporting operation within a temperature range of -55°C to 150°C.
Verify the specific suffix _D26Z against official manufacturer documentation to confirm packaging details and compliance status. Ensure the component meets RoHS requirements for the intended assembly process. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when an N-channel JFET with a 25 V breakdown voltage and TO-92 form factor is required. Consider the 310 mW power dissipation limit and the -0.5 V typical cutoff voltage for biasing design. Verify that the 10 mA continuous drain current rating aligns with the circuit's operational demands.
This part belongs to the 2N545x series of N-channel JFETs manufactured by onsemi. It shares functional similarities with other devices in the family but is distinguished by its specific electrical ratings and TO-92 packaging configuration. The component serves as a discrete semiconductor solution for analog signal processing tasks.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference guides or datasheets for verified alternatives.