2N5457_L99Z

2N5457_L99Z

$0.06
  • Description:JFET N-CH 25V TO92
  • Series:-

SKU:0846e141ed2f Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 25V TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):25 V
  • Drain to Source Voltage (Vdss):25 V
  • Current - Drain (Idss) @ Vds (Vgs=0):5 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:500 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds:7pF @ 15V
  • Resistance - RDS(On):-
  • Power - Max:310 mW
  • Operating Temperature:135°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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2N5457_L99Z

Overview

The onsemi 2N5457_L99Z is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) housed in a lead-free TO-92 package. It operates in depletion mode with a maximum drain-source voltage of 25V and a gate-source breakdown voltage of 25V. The device features a typical drain current of 2mA at Vgs=0 and Vds=15V, with a maximum power dissipation of 310mW. Input capacitance is specified at 7pF max at 15V, and feedback capacitance is 3pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Utilizes N-channel silicon technology for small-signal amplification
  • Designed for low-noise applications with high input impedance
  • Lead-free construction compliant with environmental standards

Applications

  • Low-noise preamplifiers
  • High-impedance switching circuits
  • Analog signal processing stages

Procurement Notes

Verify the specific suffix _L99Z against official onsemi documentation to confirm packaging or tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference datasheet parameters for thermal management requirements during integration.

Selection Notes

Select this component for designs requiring N-channel JFET characteristics with TO-92 through-hole mounting. Consider the 25V voltage rating and 310mW power dissipation limits when designing biasing networks. Verify that the 2mA Idss range meets the circuit's current requirements.

Part Context

This part belongs to the 2N545x series of N-channel JFETs. It shares functional similarities with other industry-standard parts like the 2N5458 but may differ in specific parameter tolerances. The L99Z suffix typically indicates a specific manufacturing lot or packaging variant defined by onsemi.

Replacement Considerations

Direct substitutes include the 2N5457 from other manufacturers such as Fairchild or Central Semiconductor. Verify pinout compatibility and parameter overlaps before substitution. Alternative packages like SOT-23 (MMBF5457) require schematic redesign.

2N5457_L99Z2N5457_L99Z
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