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The onsemi 2N5457_L99Z is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) housed in a lead-free TO-92 package. It operates in depletion mode with a maximum drain-source voltage of 25V and a gate-source breakdown voltage of 25V. The device features a typical drain current of 2mA at Vgs=0 and Vds=15V, with a maximum power dissipation of 310mW. Input capacitance is specified at 7pF max at 15V, and feedback capacitance is 3pF. Operating temperature ranges from -55°C to +150°C.
Verify the specific suffix _L99Z against official onsemi documentation to confirm packaging or tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference datasheet parameters for thermal management requirements during integration.
Select this component for designs requiring N-channel JFET characteristics with TO-92 through-hole mounting. Consider the 25V voltage rating and 310mW power dissipation limits when designing biasing networks. Verify that the 2mA Idss range meets the circuit's current requirements.
This part belongs to the 2N545x series of N-channel JFETs. It shares functional similarities with other industry-standard parts like the 2N5458 but may differ in specific parameter tolerances. The L99Z suffix typically indicates a specific manufacturing lot or packaging variant defined by onsemi.
Direct substitutes include the 2N5457 from other manufacturers such as Fairchild or Central Semiconductor. Verify pinout compatibility and parameter overlaps before substitution. Alternative packages like SOT-23 (MMBF5457) require schematic redesign.