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The onsemi 2N5458 is a single N-channel Junction Field-Effect Transistor (JFET) housed in a TO-92 through-hole package. It features a drain-source voltage rating of 25 V and a maximum power dissipation of 310 mW. The device exhibits an input capacitance of up to 7 pF at 15 V and a gate-source breakdown voltage of 25 V. Typical drain current is specified as 2 mA at 15 V with zero gate-source voltage, while the gate cutoff voltage is 1 V at 10 nA. The component supports a maximum junction temperature of 135°C.
Verify part status carefully as the 2N5458G variant is listed as obsolete by onsemi. Confirm availability through authorized distributors or secondary market suppliers. Ensure the specific suffix matches the required package and electrical tolerances. Check for RoHS compliance if environmental regulations apply to the final assembly. Validate datasheet revisions before design finalization.
Select this component for low-power, low-voltage analog designs requiring high input impedance. Compare Idss ranges against circuit requirements to ensure proper biasing. Consider thermal limits given the 310 mW dissipation rating in small packages. Evaluate alternative JFETs if higher current drive or different pinouts are needed for the specific layout constraints.
The 2N5458 belongs to the general-purpose N-channel JFET family, often paired with the P-channel 2N5457. It serves as a fundamental discrete semiconductor device for analog signal conditioning. The TO-92 form factor remains common in legacy designs and educational prototypes where through-hole construction is preferred over surface mount technologies.
Direct substitutes include the MMBF5458 for surface-mount SOT-23 implementations. Other compatible N-channel JFETs may require verification of pinout compatibility and matching electrical parameters such as breakdown voltage and transconductance.