2N5466

Overview

The Microchip Technology 2N5466 is a single NPN silicon power bipolar junction transistor designed for high-voltage applications. It features a maximum collector-emitter voltage of 400 V and a continuous collector current rating of 3 A. The device supports a DC current gain minimum of 15 and can dissipate up to 140 W of power in a through-hole TO-204AA (TO-3) package. It operates within a wide temperature range, with a junction temperature capability up to 200°C.

Feature Summary

• High voltage handling capability suitable for demanding power circuits
• Robust thermal performance with high power dissipation ratings
• Hermetically sealed metal case construction for reliability

Applications

• High-voltage switching circuits
• Power amplification stages
• Industrial control systems requiring rugged components

Procurement Notes

Verify the specific manufacturer source when ordering, as multiple vendors supply this standard part number. Confirm RoHS status and lead times directly with suppliers, as these vary by distributor. Ensure the TO-3 package type matches your thermal management requirements. Check for any specific ordering suffixes that may indicate testing or screening levels.

Selection Notes

Select the 2N5466 for applications requiring high voltage isolation and significant current handling in a durable metal package. Consider the TO-3 footprint for mounting solutions. Evaluate thermal resistance requirements against the 140 W dissipation rating. Compare against alternative NPN transistors if lower voltage or different packaging is needed.

Part Context

This component belongs to the family of general-purpose and power NPN silicon transistors manufactured by Microchip Technology. It is commonly used in legacy and industrial designs where hermetic sealing and high power density are critical. The TO-3 package provides excellent heat sinking capabilities compared to plastic alternatives.