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Product Detailed Parameters
- Description：TRANS NPN 400V 3A TO66
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：3:00 AM
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：70 W
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66 (TO-213AA)
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 2N5469 is a single NPN bipolar junction transistor (BJT) housed in a TO-66 metal can package. It features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 3A. The device supports a maximum power dissipation of 40W and operates at temperatures up to 175°C. With a transition frequency of 2.5 MHz, it is designed for high-voltage switching applications.
Feature Summary
- High voltage capability with 400V collector-emitter breakdown rating
- Robust thermal performance supporting up to 40W power dissipation
- High current handling capacity rated at 3A collector current
- Metal can construction ensuring durability in demanding environments
Applications
- High-voltage switching circuits
- Industrial control systems requiring robust discrete transistors
- Power supply designs utilizing through-hole mounting
Procurement Notes
Verify the specific datasheet version and manufacturer documentation before integration. Confirm that the TO-66 package dimensions align with your PCB or chassis layout requirements. Ensure that thermal management solutions are adequate for the 40W dissipation limit under your specific operating conditions. Check for any lead-free or RoHS compliance updates if required by your manufacturing standards.
Selection Notes
Select this component when a high-voltage NPN BJT with significant current handling is required. The TO-66 package offers superior heat dissipation compared to plastic packages. Consider the 400V rating for primary-side switching or flyback applications. Evaluate the 2.5 MHz transition frequency against your switching speed requirements to ensure appropriate performance margins.
Part Context
This part belongs to the family of high-power discrete bipolar transistors manufactured by Microchip Technology. The TO-66 metal can package is a legacy form factor often used in industrial and military-grade electronics where reliability and thermal performance are critical. It serves as a replacement for similar high-voltage NPN devices in existing designs.
Replacement Considerations
The 2N5078 and 2N5468 are documented as similar components with identical descriptions and specifications. Verify pinout compatibility and exact electrical parameter matches before substitution.
