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The onsemi 2N5484_D27Z is a small signal N-channel silicon Junction Field-Effect Transistor (JFET) housed in the TO-226AA package. It operates in depletion mode with a single element configuration. Key electrical parameters include a maximum drain-source breakdown voltage of 25V and a gate-source cutoff voltage of -0.5V. The device supports a continuous drain current of 10mA at room temperature, with a typical forward transconductance of 3000µS. It features a low feedback capacitance of 1.2pF and is designed for general-purpose switching and amplification applications within standard operating temperature ranges.
Verify the specific suffix D27Z against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with TO-226AA footprint requirements during PCB layout. Cross-reference datasheet limits for thermal management and voltage ratings prior to integration into final designs.
Select this component for applications requiring a depletion-mode N-channel JFET with moderate gain characteristics. Evaluate the 25V breakdown limit against peak circuit voltages. Consider the 10mA current rating for load requirements. Compare alternative packages if surface-mount solutions are preferred over the through-hole TO-226AA form factor.
This part belongs to the family of small signal field-effect transistors manufactured by onsemi. It serves as a discrete semiconductor solution for linear and switching applications. The TO-226AA designation indicates a standardized cylindrical leaded package commonly used in through-hole assembly processes for robust mechanical mounting.
Direct substitutes must match the N-channel JFET type, depletion mode operation, and TO-226AA package. Verify pinout compatibility and ensure equivalent breakdown voltage and transconductance values from other manufacturers.