2N5550/D26Z

2N5550/D26Z

$0.03
  • Description:TRANS NPN 140V 0.6A TO-92-3
  • Series:-

SKU:5a81de13efb6 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 140V 0.6A TO-92-3
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5550/D26Z

Overview

The Fairchild Semiconductor 2N5550/D26Z is an NPN small-signal bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 140 V and a continuous collector current rating of 600 mA. The device has a transition frequency of 300 MHz and a maximum power dissipation of 625 mW. Key electrical characteristics include a DC current gain (hFE) of at least 60 at 10 mA and 5 V, a collector cutoff current of 100 nA, and a saturation voltage of 250 mV at specified conditions. The operating junction temperature reaches 150°C.

Feature Summary

  • High voltage capability with 140 V collector-emitter breakdown
  • Moderate current handling up to 600 mA collector current
  • Wideband performance with 300 MHz transition frequency
  • Standard TO-92-3 through-hole mounting for general circuit integration

Applications

  • General-purpose amplification circuits
  • Switching applications requiring moderate voltage isolation
  • Audio signal processing stages
  • Driver circuits for low-power loads

Procurement Notes

Verify the manufacturer designation as Fairchild Semiconductor or its successor entities when sourcing this component. Confirm the specific suffix D26Z corresponds to the TO-92-3 package variant. Ensure the part status is active if new production is required. Cross-reference datasheets for exact hFE binning requirements relevant to your specific gain needs. Check for RoHS compliance status depending on the manufacturing batch date.

Selection Notes

Select this component for designs requiring NPN switching or amplification with high voltage tolerance. The 140 V rating exceeds standard 50 V or 80 V alternatives, making it suitable for higher voltage rails. Consider the 600 mA limit for load currents; do not exceed this value without derating. The TO-92 package limits thermal dissipation compared to larger packages, so ensure adequate heat sinking or duty cycle management for continuous operation near the 625 mW limit.

Part Context

The 2N5550 is a legacy NPN silicon transistor originally defined by JEDEC standards. The /D26Z suffix indicates a specific packaging and marking configuration from Fairchild Semiconductor. This device belongs to the family of general-purpose small-signal transistors used in analog and digital logic interfaces. It serves as a robust alternative to lower-voltage counterparts like the 2N3904 in high-voltage environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with generic 2N5550 equivalents from other manufacturers based on pinout and absolute maximum ratings.

2N5550/D26Z2N5550/D26Z
$0.03
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