SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 2N5550 TIN/LEAD is a silicon NPN small-signal bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a collector-emitter breakdown voltage of 140 V and a continuous collector current rating of 600 mA. The device offers a transition frequency of 300 MHz and a maximum power dissipation of 625 mW. It operates within a temperature range of -65 °C to +150 °C, with a minimum DC current gain of 60 at 10 mA.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead composition and compliance status. Ensure the requested part number matches the exact electrical specifications required for your design. Confirm availability directly with authorized distributors as stock levels fluctuate. Validate that the package type aligns with your PCB footprint requirements before finalizing procurement.
Select this component when high-frequency response and moderate current handling are required in a compact form factor. Consider the 140 V breakdown voltage for medium-voltage switching tasks. Evaluate the 625 mW power dissipation limit against your thermal management strategy. Compare the 300 MHz transition frequency against alternative transistors to ensure adequate bandwidth for your signal processing needs.
This component belongs to the standard NPN small-signal transistor family produced by Central Semiconductor. It utilizes silicon technology and is designed for general-purpose electronic applications. The TO-92-3 package provides a cost-effective solution for through-hole assembly processes commonly used in consumer electronics and industrial control systems.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or manufacturer datasheets for verified equivalents.