2N5550 TIN/LEAD

2N5550 TIN/LEAD

$0.15
  • Description:140V 600MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:d5f8db363712 Category: Brand:

  
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Product Detailed Parameters

  • Description:140V 600MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 2.5A, 4V
  • Power - Max:625 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5550 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5550 TIN/LEAD is a silicon NPN small-signal bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a collector-emitter breakdown voltage of 140 V and a continuous collector current rating of 600 mA. The device offers a transition frequency of 300 MHz and a maximum power dissipation of 625 mW. It operates within a temperature range of -65 °C to +150 °C, with a minimum DC current gain of 60 at 10 mA.

Feature Summary

  • High-frequency operation capability suitable for RF applications
  • Robust thermal performance with extended operating temperature limits
  • Standardized TO-92-3 leaded package for reliable mounting

Applications

  • Radio frequency amplification circuits
  • General-purpose switching applications
  • Small-signal processing stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead composition and compliance status. Ensure the requested part number matches the exact electrical specifications required for your design. Confirm availability directly with authorized distributors as stock levels fluctuate. Validate that the package type aligns with your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component when high-frequency response and moderate current handling are required in a compact form factor. Consider the 140 V breakdown voltage for medium-voltage switching tasks. Evaluate the 625 mW power dissipation limit against your thermal management strategy. Compare the 300 MHz transition frequency against alternative transistors to ensure adequate bandwidth for your signal processing needs.

Part Context

This component belongs to the standard NPN small-signal transistor family produced by Central Semiconductor. It utilizes silicon technology and is designed for general-purpose electronic applications. The TO-92-3 package provides a cost-effective solution for through-hole assembly processes commonly used in consumer electronics and industrial control systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or manufacturer datasheets for verified equivalents.

2N5550 TIN/LEAD2N5550 TIN/LEAD
$0.15
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