2N5550_D26Z

Overview

The onsemi 2N5550_D26Z is an NPN silicon small-signal bipolar junction transistor (BJT) housed in a TO-92-3 through-hole package. It features a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 140 V. The device offers a transition frequency of 300 MHz and a maximum power dissipation of 625 mW at 25°C ambient temperature. Key electrical limits include a collector-base voltage of 160 V, an emitter-base voltage of 6 V, and a minimum DC current gain of 20. The component supports a maximum operating junction temperature of 150°C.

Feature Summary

• High-voltage capability with 140V collector-emitter breakdown for robust switching applications
• Moderate current handling up to 600mA suitable for general-purpose amplification
• Fast switching performance characterized by a 300MHz transition frequency
• Standardized TO-92-3 leaded package facilitating easy integration into printed circuit boards

Applications

• General-purpose signal amplification circuits
• Electronic switching applications requiring moderate voltage isolation
• Driver stages for low-power loads
• Audio pre-amplifier input stages

Procurement Notes

Verify the specific suffix _D26Z against official manufacturer documentation to confirm packaging format and reel specifications. Ensure compatibility with existing assembly processes regarding lead forming and thermal management requirements for the TO-92 package. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a standard NPN transistor with 140V rating and 600mA capacity is required. Consider the 625mW power dissipation limit and ensure adequate heat sinking or airflow if operating near maximum ratings. Compare hFE ranges and transition frequencies against alternative devices if higher gain or speed is necessary for the specific circuit topology.

Part Context

This part belongs to the 2N5550 series of NPN transistors, widely used as a general-purpose replacement for older 2N-series equivalents. It serves as a fundamental discrete semiconductor component in analog and digital logic interfaces. The D26Z suffix typically denotes specific tape-and-reel packaging configurations for automated assembly, distinguishing it from bulk or cut-tape variants.

Replacement Considerations

Direct substitutes include the 2N5550TA and 2N5550G from onsemi, which share identical electrical characteristics. Other compatible replacements may include generic 2N5550 equivalents from manufacturers like Fairchild or NXP, provided they meet the same TO-92 pinout and voltage/current specifications.