2N5550RLRA

2N5550RLRA

$0.04
  • Description:TRANS NPN 140V 0.6A TO92
  • Series:-

SKU:bfb0ffca6c1c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 140V 0.6A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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2N5550RLRA

Overview

The onsemi 2N5550RLRA is an NPN silicon epitaxial planar transistor designed for amplifier applications. It features a collector-emitter breakdown voltage of 140 V and a continuous collector current rating of 600 mA. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 250, a transition frequency (fT) up to 300 MHz, and a maximum power dissipation of 625 mW at 25°C ambient temperature. It utilizes a TO-92 package.

Feature Summary

  • High-voltage capability with a 140 V collector-emitter breakdown voltage
  • Suitable for general-purpose amplifier circuits
  • Operates reliably across extended industrial temperature ranges

Applications

  • General-purpose amplification stages
  • Switching applications requiring high voltage isolation
  • Audio signal processing circuits

Procurement Notes

Verify the specific ordering suffix RLRA confirms tape and reel packaging containing 2000 units per reel. Confirm Pb-free status if required by assembly specifications. Ensure the component matches the 2N5550/D datasheet revision for accurate parameter validation during procurement.

Selection Notes

Select this component when a 140 V collector-emitter voltage rating is required for NPN switching or amplification tasks. Compare against the 2N5551 variant if a higher 160 V rating is necessary. Consider the TO-92 through-hole package constraints and thermal resistance values for heat dissipation requirements in the target design.

Part Context

This part belongs to the 2N5550/2N5551 family of NPN silicon transistors manufactured by onsemi. These devices are standard small-signal bipolar junction transistors widely used in electronic designs. The RLRA suffix specifically denotes the tape and reel packaging format intended for automated surface mount or through-hole insertion processes.

Replacement Considerations

The 2N5551 serves as a direct functional substitute with a higher 160 V rating. Other generic NPN transistors may replace it if voltage and current ratings exceed the 140 V and 600 mA limits respectively.

2N5550RLRA2N5550RLRA
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