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The onsemi 2N5550RLRA is an NPN silicon epitaxial planar transistor designed for amplifier applications. It features a collector-emitter breakdown voltage of 140 V and a continuous collector current rating of 600 mA. The device operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 250, a transition frequency (fT) up to 300 MHz, and a maximum power dissipation of 625 mW at 25°C ambient temperature. It utilizes a TO-92 package.
Verify the specific ordering suffix RLRA confirms tape and reel packaging containing 2000 units per reel. Confirm Pb-free status if required by assembly specifications. Ensure the component matches the 2N5550/D datasheet revision for accurate parameter validation during procurement.
Select this component when a 140 V collector-emitter voltage rating is required for NPN switching or amplification tasks. Compare against the 2N5551 variant if a higher 160 V rating is necessary. Consider the TO-92 through-hole package constraints and thermal resistance values for heat dissipation requirements in the target design.
This part belongs to the 2N5550/2N5551 family of NPN silicon transistors manufactured by onsemi. These devices are standard small-signal bipolar junction transistors widely used in electronic designs. The RLRA suffix specifically denotes the tape and reel packaging format intended for automated surface mount or through-hole insertion processes.
The 2N5551 serves as a direct functional substitute with a higher 160 V rating. Other generic NPN transistors may replace it if voltage and current ratings exceed the 140 V and 600 mA limits respectively.