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The onsemi 2N5550TF is an NPN silicon epitaxial planar transistor designed for general-purpose high-voltage amplifier applications. It operates in a TO-92-3 through-hole package with kinked leads. Key electrical specifications include a maximum collector current of 600 mA, a collector-emitter breakdown voltage (VCEO) of 140 V, and a collector-base breakdown voltage (VCBO) of 160 V. The device features a transition frequency (fT) of 300 MHz and a maximum power dissipation of 625 mW at 25°C ambient temperature. It supports a junction temperature up to 150°C.
Verify the specific suffix TF against the manufacturer's official datasheet to confirm lead form and packaging details. Ensure the component meets RoHS compliance requirements if applicable to your assembly process. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.
Select this component when a robust NPN transistor with 140 V collector-emitter voltage is required. It is appropriate for designs needing 600 mA continuous current handling in a compact through-hole footprint. Consider the 625 mW power dissipation limit and thermal management needs during circuit layout.
The 2N5550 series belongs to a family of NPN silicon epitaxial planar transistors widely used in analog electronics. The TF variant specifically denotes the through-hole packaging style offered by onsemi. This component serves as a reliable alternative to legacy equivalents from other manufacturers while maintaining standard JEDEC pinout compatibility.
Direct substitutes include the 2N5550TA and 2N5550G from onsemi, which share identical electrical characteristics but may differ in packaging or reel specifications. Verify pinout compatibility and thermal resistance values when replacing with generic equivalents.