2N5550TFR

$0.24

Description：TRANS NPN 140V 0.6A TO-92-3
Series：-

SKU:bea3343d3cc1 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 140V 0.6A TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：140 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5550TFR

Overview

The onsemi 2N5550TFR is an NPN silicon epitaxial planar transistor housed in a TO-92 package. It supports a maximum DC collector current of 600 mA and a collector-emitter voltage (VCEO) of 140 V. The device features a collector-base voltage (VCBO) of 160 V and an emitter-base voltage (VEBO) of 6 V. Key electrical parameters include a transition frequency (fT) of 300 MHz, power dissipation (Pd) of 625 mW, and a minimum DC current gain (hFE) of 20. It operates at temperatures up to 150°C.

Feature Summary

Utilizes silicon epitaxial planar technology for reliable switching performance
Designed for through-hole mounting in standard TO-92 packages
Provides high-frequency operation capabilities with a 300 MHz transition frequency

Applications

General-purpose switching circuits
Amplifier stages requiring moderate voltage handling
Driver applications for low-power loads

Procurement Notes

Verify the specific suffix TFR against official datasheets to confirm packaging details such as tape and reel specifications. Ensure that the required hFE binning aligns with design constraints, as minimum gain values may vary by manufacturer lot. Confirm RoHS compliance status directly from the supplier documentation prior to integration into final assemblies.

Selection Notes

Select this component when a general-purpose NPN transistor with 140 V breakdown voltage is required. Compare against the 2N5551 series if higher voltage ratings are necessary. Consider thermal management requirements given the 625 mW power dissipation limit in the TO-92 package. Verify lead form compatibility for automated insertion processes.

Part Context

This part belongs to the 2N5550 family of NPN transistors manufactured by onsemi. It serves as a standard discrete semiconductor solution for electronic designs. The component is distinct from complementary PNP types like the 2N3906. It is widely used in consumer electronics and industrial control systems where reliable switching is essential.