2N5551

$0.03

Description：TRANS NPN 160V 0.6A TO92
Series：-

SKU:387bd3e03496 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A TO92
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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2N5551

Overview

The onsemi 2N5551 is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates with a collector-emitter voltage of 160 V and a collector-base voltage of 180 V, supporting a continuous collector current of 600 mA. The device features a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA and VCE = 5.0 V. Total power dissipation is rated at 625 mW, with a junction-to-case thermal resistance of 83.3 °C/W. The transition frequency (fT) is specified at 100 MHz under standard test conditions.

Feature Summary

Designed for high-voltage amplification and gas discharge display driver applications
Compliant with Pb-Free, Halogen Free, and BFR Free standards

Applications

General-purpose high-voltage amplifiers
Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Suffixes such as TA, TFR, TF, and BU indicate distinct packaging formats including Ammo Pack, Tape & Reel, and Bulk Bag. Confirm that the selected variant matches the required shipping quantity and lead time specifications provided in the latest datasheet revision.

Selection Notes

Select the 2N5551 when circuit requirements demand high collector-emitter breakdown voltage alongside moderate signal bandwidth. Ensure the operating ambient temperature remains within the -55°C to +150°C range. Verify that the total power dissipation does not exceed 625 mW and apply appropriate derating factors above 25°C to maintain safe junction temperatures during operation.

Part Context

The 2N5551 belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It utilizes a TO-92-3 package configuration available in Case 135AR or Case 135AN variants. This component serves as a discrete semiconductor solution for linear and switching circuits requiring robust high-voltage handling capabilities in a through-hole form factor.

Replacement Considerations

Consult the manufacturer's discontinuation notice for obsolete part numbers like 2N5551YBU. Contact onsemi representatives for current availability information regarding discontinued devices. No direct substitute part numbers are confirmed in the provided documentation.