2N5551RL1

$0.03

Description：TRANS NPN 160V 0.6A TO92
Series：-

SKU:1869b40fa738 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A TO92
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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2N5551RL1

Overview

The onsemi 2N5551RL1 is a discontinued NPN silicon general-purpose amplifier transistor housed in a TO-92-3 (Case 135AR) lead-formed package. It supports a maximum collector-emitter voltage of 160 V and continuous collector current of 600 mA. The device features a total power dissipation of 625 mW at 25°C, with a thermal resistance junction-to-ambient of 200 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, VCE = 5 V, and a transition frequency of 100 MHz. Operating temperatures span from -55°C to +150°C.

Feature Summary

Designed for high-voltage amplification and gas discharge display driver applications
Compliant with Pb-Free, Halogen Free, and BFR Free standards

Applications

General-purpose high-voltage amplifiers
Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation, as the 2N5551 series includes multiple variants with distinct packaging and binning specifications. Confirm component availability status directly with authorized distributors or the manufacturer, as certain part numbers within this family have been officially discontinued. Ensure that any substitute components meet the required electrical parameters and physical dimensions for the intended circuit design.

Selection Notes

Select this component when a through-hole NPN transistor with high voltage capability is required for general-purpose amplification. Consider the thermal resistance and power dissipation limits relative to the ambient operating temperature. Verify that the hFE binning requirements align with the circuit's gain specifications, noting that standard versions offer a wider gain range compared to specific sub-types.

Part Context

The 2N5551 is an NPN epitaxial planar silicon transistor manufactured by onsemi. It belongs to a family of general-purpose high-voltage transistors designed for robust performance in amplifier circuits. The device utilizes a TO-92-3 plastic package suitable for through-hole mounting, providing a compact solution for discrete semiconductor applications requiring moderate power handling and high breakdown voltages.

Replacement Considerations

Consult the manufacturer's discontinuation notice for available alternatives. Cross-reference with other NPN transistors offering similar 160V VCEO ratings and TO-92-3 packaging if direct substitution is necessary.