2N5551RL1G

$0.07

Description：TRANS NPN 160V 0.6A TO92
Series：-

SKU:f15f5dbc6ede Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A TO92
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
Supplier Device Package：TO-92 (TO-226)
Grade：-
Qualification：-

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2N5551RL1G

Overview

The onsemi 2N5551RL1G is an NPN silicon general-purpose amplifier transistor housed in a TO-92-3 through-hole package. It features a collector-emitter voltage of 160 V, continuous collector current of 600 mA, and total device dissipation of 625 mW. The component operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) of 80 at IC=10mA/VCE=5V, saturation voltage of 0.20 V at IC=50mA/IB=5mA, and a transition frequency of 100 MHz.

Feature Summary

Designed for high-voltage amplification and gas discharge display driver applications
Compliant with Pb-Free, Halogen Free, and BFR Free standards

Applications

General-purpose high-voltage amplifiers
Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm current availability status as some variants are discontinued. Ensure compliance with RoHS requirements if applicable to the target assembly process.

Selection Notes

Select this component for circuits requiring high-voltage handling capabilities up to 160 V. Consider the thermal resistance of 83.3 °C/W when designing heat dissipation strategies. Verify that the required current gain meets the minimum specifications for the intended operating conditions.

Part Context

This part belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It is commonly used in discrete semiconductor products for signal amplification. The device is available in various packaging options including Ammo Pack and Tape & Reel configurations.

Replacement Considerations

Consult the manufacturer's discontinuation notice for obsolete variants. Cross-reference with other NPN transistors offering similar voltage and current ratings if exact replacement is unavailable.