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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551RLRP is a discontinued NPN general-purpose amplifier transistor manufactured by Semiconductor Components Industries, LLC. It operates in a TO-92-3 (Case 135AR) through-hole package with a maximum collector-emitter voltage of 160 V and continuous collector current of 600 mA. The device features a total power dissipation of 625 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200 °C/W. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC = 10 mA and VCE = 5 V, and a transition frequency (fT) of 100 MHz under specified test conditions.
Feature Summary
- Designed for high-voltage amplification applications
- Suitable for gas discharge display drivers
- Compliant with RoHS standards and free from halogens and brominated flame retardants
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Note that this component has been officially discontinued by onsemi; availability is limited to existing stock or secondary market sources. Confirm compliance requirements such as RoHS status directly with the supplier before procurement.
Selection Notes
Select this component for circuits requiring moderate voltage handling up to 160 V and low-power signal amplification. Ensure the application stays within the 625 mW power dissipation limit and consider thermal derating above 25°C. Verify that the required hFE range meets the circuit design specifications, as the standard part offers a minimum gain of 80.
Part Context
This device belongs to the 2N5551 series of NPN bipolar junction transistors produced by onsemi. The series is characterized by its use in general-purpose analog switching and amplification tasks. The specific model utilizes a lead-formed TO-92-3 plastic package designed for reliable through-hole mounting on printed circuit boards.
Replacement Considerations
The datasheet explicitly lists the 2N5551CTA, 2N5551YTA, and 2N5551YBU as discontinued devices. No active substitute part numbers are provided in the official documentation.
